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| SMBT2907A/MMBT2907A PNP Silicon Switching Transistor High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2222A/ MMBT2222A (NPN) 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 1 VPS05161 Type Marking SMBT2907A/MMBT2907A s2F 1=B Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 77 C Junction temperature Storage temperature Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 60 60 5 600 330 150 -65 ... 150 Unit V mA mW C Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1 Jun-12-2002 SMBT2907A/MMBT2907A Electrical Characteristicsn at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 1.3 2.6 VCEsat 0.4 1.6 hFE 75 100 100 100 50 300 V IEBO 10 nA ICBO 10 A ICBO 10 nA V(BR)EBO 5 V(BR)CBO 60 V(BR)CEO 60 V Symbol min. Values typ. max. Unit 1) Pulse test: t =300s, D = 2% 2 Jun-12-2002 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA tf 30 tstg 80 tr 40 td 10 Ceb 30 Ccb 8 fT 200 typ. max. Unit MHz pF ns 3 Jun-12-2002 SMBT2907A/MMBT2907A Test circuits Delay and rise time -30 V 200 Osc. 1 k 50 EHN00053 Input Z 0 = 50 t r < 2ns 0 -16 V 200 ns t r < 5 ns Storage and fall time -6 V +15 V Input Z 0 = 50 t r < 2 ns 0 -30 V 200 ns EHN00054 1 k 50 1 k 37 Osc. t r < 5 ns Oscillograph: R > 100, C < 12pF, tr < 5ns 4 Jun-12-2002 SMBT2907A/MMBT2907A Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF Ccb 5 SMBT 2907/A EHP00747 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 C 150 TS 10 0 10 -1 5 10 0 5 10 1 V VCB 5 10 2 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBT 2907/A EHP00748 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 SMBT 2907/A EHP00749 tp D= T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 C 5 Jun-12-2002 SMBT2907A/MMBT2907A Saturation voltage IC = f (VBEsat , VCEsat) hFE = 10 10 3 mA SMBT 2907/A EHP00750 Delay time t d = f (IC) Rise time tr = f (IC) 10 3 ns SMBT 2907/A EHP00751 C 10 2 5 V CE V BE t r, t d 5 VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V tr 10 1 5 10 2 td 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 10 1 0 10 5 10 1 VBE sat , VCE sat 5 10 2 mA 5 10 3 C Storage time tstg = f(IC) Fall time t f = f (IC) 10 3 t stg ns 5 SMBT 2907/A EHP00752 10 3 tf ns 5 SMBT 2907/A EHP00753 VCC = 30 V h FE = 20 h FE = 10 10 2 10 2 5 h FE = 10 h FE = 20 5 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 C C 6 Jun-12-2002 SMBT2907A/MMBT2907A DC current gain hFE = f (IC ) VCE = 5V 10 3 SMBT 2907/A EHP00754 h FE 5 150 C 25 C 10 2 -50 C 5 10 1 -1 10 10 0 10 1 10 2 mA 10 3 C 7 Jun-12-2002 |
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